型号:

SI1300BDL-T1-E3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET N-CH 20V 400MA SOT323-3
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SI1300BDL-T1-E3 PDF
产品目录绘图 DL-T1-E3 Series SOT-323
标准包装 3,000
系列 TrenchFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 400mA
开态Rds(最大)@ Id, Vgs @ 25° C 850 毫欧 @ 250mA,4.5V
Id 时的 Vgs(th)(最大) 1V @ 250µA
闸电荷(Qg) @ Vgs 0.84nC @ 4.5V
输入电容 (Ciss) @ Vds 35pF @ 10V
功率 - 最大 200mW
安装类型 表面贴装
封装/外壳 SC-70,SOT-323
供应商设备封装 SC-70-3
包装 带卷 (TR)
产品目录页面 1661 (CN2011-ZH PDF)
其它名称 SI1300BDL-T1-E3TR
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